P4SMAJ6.5_R1_00001 vs SMAJ6.5 feature comparison

P4SMAJ6.5_R1_00001 PanJit Semiconductor

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SMAJ6.5 Galaxy Semi-Conductor Co Ltd

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer PANJIT INTERNATIONAL INC GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 9.14 V 8.82 V
Breakdown Voltage-Min 7.22 V 7.22 V
Breakdown Voltage-Nom 8.18 V 8.02 V
Clamping Voltage-Max 12.3 V 12.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard IEC-61000-4-2
Rep Pk Reverse Voltage-Max 6.5 V 6.5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 46
Package Description R-PDSO-C2
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Peak Reflow Temperature (Cel) 260

Compare P4SMAJ6.5_R1_00001 with alternatives

Compare SMAJ6.5 with alternatives