P4SMAJ48A_R1_00001
vs
SMAJ48AQ-13-F
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PANJIT INTERNATIONAL INC
DIODES INC
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
58.9 V
58.9 V
Breakdown Voltage-Min
53.3 V
53.3 V
Breakdown Voltage-Nom
56.1 V
56.1 V
Clamping Voltage-Max
77.4 V
77.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
IEC-61000-4-2
AEC-Q101; IATF 16949
Rep Pk Reverse Voltage-Max
48 V
48 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN
Matte Tin (Sn)
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Factory Lead Time
40 Weeks
Samacsys Manufacturer
Diodes Incorporated
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Forward Voltage-Max (VF)
3.5 V
Moisture Sensitivity Level
1
Power Dissipation-Max
1 W
Reverse Current-Max
5 µA
Reverse Test Voltage
48 V
Compare P4SMAJ48A_R1_00001 with alternatives
Compare SMAJ48AQ-13-F with alternatives