P4SMAJ48AS_R1_00001 vs SMAJ48A-GT3 feature comparison

P4SMAJ48AS_R1_00001 PanJit Semiconductor

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SMAJ48A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer PANJIT INTERNATIONAL INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description SMA, 2 PIN R-PDSO-C2
Reach Compliance Code not_compliant unknown
Breakdown Voltage-Max 58.9 V 61.3 V
Breakdown Voltage-Min 53.3 V 53.3 V
Breakdown Voltage-Nom 56.1 V
Clamping Voltage-Max 77.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3.3 W 1 W
Reference Standard IEC-61000-4-2; IEC-61249; MIL-STD-750 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 48 V 48 V
Reverse Current-Max 1 µA
Reverse Test Voltage 48 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
JEDEC-95 Code DO-214AC
Moisture Sensitivity Level 1
Qualification Status Not Qualified

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