P4SMAJ40A-AU_R2_000A1
vs
SMAJ40HE3G
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
49.1 V
54.3 V
Breakdown Voltage-Min
44.4 V
44.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
DO-214AC
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
AEC-Q101; IEC-61000-4-2; TS 16949
AEC-Q101
Rep Pk Reverse Voltage-Max
40 V
40 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Base Number Matches
1
1
Date Of Intro
2016-01-28
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom
49.35 V
Clamping Voltage-Max
71.4 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Power Dissipation-Max
1 W
Terminal Finish
MATTE TIN
Compare P4SMAJ40A-AU_R2_000A1 with alternatives
Compare SMAJ40HE3G with alternatives