P4SMAJ26A vs SMAJ26AE3 feature comparison

P4SMAJ26A Secos Corporation

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SMAJ26AE3 Taiwan Semiconductor

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer SECOS CORP TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Base Number Matches 9 2
Rohs Code Yes
Package Description R-PDSO-C2
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 31.9 V
Breakdown Voltage-Min 28.9 V
Breakdown Voltage-Nom 30.4 V
Clamping Voltage-Max 42.1 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 26 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

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