P4SMAJ210 vs P4SMAJ210-AU_R2_100A1 feature comparison

P4SMAJ210 Dean Technology

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P4SMAJ210-AU_R2_100A1 PanJit Semiconductor

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer DEAN TECHNOLOGY INC PAN JIT INTERNATIONAL INC
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 296.1 V 296.1 V
Breakdown Voltage-Min 231 V 231 V
Breakdown Voltage-Nom 263.55 V 263.55 V
Clamping Voltage-Max 376 V 376 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 400 W
Rep Pk Reverse Voltage-Max 210 V 210 V
Reverse Current-Max 5 µA
Reverse Test Voltage 210 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 4 1
Pbfree Code Yes
Rohs Code Yes
Package Description R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 400 W
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard AEC-Q101; TS 16949
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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