P4SMAJ160 vs SMAJ160E2 feature comparison

P4SMAJ160 Dean Technology

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SMAJ160E2 Taiwan Semiconductor

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer DEAN TECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Package Description SMA, 2 PIN R-PDSO-C2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 226 V 218 V
Breakdown Voltage-Min 178 V 178 V
Breakdown Voltage-Nom 202 V 198 V
Clamping Voltage-Max 287 V 287 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 400 W 1 W
Rep Pk Reverse Voltage-Max 160 V 160 V
Reverse Current-Max 5 µA
Reverse Test Voltage 160 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 11 1
Rohs Code Yes
Additional Feature EXCELLENT CLAMPING CAPABILITY
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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