P4SMAJ12ADF-13
vs
PGSMAJ12AM2G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
DIODES INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Factory Lead Time
32 Weeks
Samacsys Manufacturer
Diodes Incorporated
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
14.7 V
14.7 V
Breakdown Voltage-Min
13.3 V
13.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-F2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Reference Standard
IEC-61000-4-2
AEC-Q101
Rep Pk Reverse Voltage-Max
12 V
12 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
FLAT
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Package Description
R-PDSO-C2
Date Of Intro
2018-07-17
Breakdown Voltage-Nom
14 V
Clamping Voltage-Max
19.9 V
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AC
Reverse Current-Max
1 µA
Reverse Test Voltage
12 V
Time@Peak Reflow Temperature-Max (s)
30
Compare P4SMAJ12ADF-13 with alternatives
Compare PGSMAJ12AM2G with alternatives