P4SMA8.2C-AU_R1_000A1 vs P4SMA8.2CHF2 feature comparison

P4SMA8.2C-AU_R1_000A1 PanJit Semiconductor

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P4SMA8.2CHF2 Taiwan Semiconductor

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Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 9.02 V 9.02 V
Breakdown Voltage-Min 7.38 V 7.38 V
Breakdown Voltage-Nom 8.2 V 8.2 V
Clamping Voltage-Max 12.5 V 12.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard AEC-Q101; IEC-61249; ISO 10605; MIL-STD-750 AEC-Q101
Rep Pk Reverse Voltage-Max 6.63 V 6.63 V
Reverse Current-Max 400 µA
Reverse Test Voltage 6.63 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 4
Rohs Code Yes
Package Description R-PDSO-C2
Additional Feature EXCELLENT CLAMPING CAPABILITY
JEDEC-95 Code DO-214AC
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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