P4SMA8.2A vs P4SMA8.2AHE3_A/I feature comparison

P4SMA8.2A Yangzhou Yangjie Electronics Co Ltd

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P4SMA8.2AHE3_A/I Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer YANGZHOU YANGJIE ELECTRONICS CO LTD VISHAY INTERTECHNOLOGY INC
Package Description SMA, 2 PIN
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 8.61 V 8.61 V
Breakdown Voltage-Min 7.79 V 7.79 V
Breakdown Voltage-Nom 8.2 V 8.2 V
Clamping Voltage-Max 12.1 V 12.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 3.3 W
Rep Pk Reverse Voltage-Max 7 V 7.02 V
Reverse Current-Max 200 µA
Reverse Test Voltage 7 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 23 1
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) 30

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