P4SMA68AHE3_A/I vs SMAJP4KE68CAE3TR feature comparison

P4SMA68AHE3_A/I Vishay Intertechnologies

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SMAJP4KE68CAE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 8 Weeks
Additional Feature EXCELLENT CLAMPING CAPABILITY TR, 7 INCH; 750
Breakdown Voltage-Max 71.4 V 71.4 V
Breakdown Voltage-Min 64.6 V 64.6 V
Breakdown Voltage-Nom 68 V
Clamping Voltage-Max 92 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3.3 W 1.52 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 58.1 V 58.1 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 10
Part Package Code DO-214AC
Package Description R-PDSO-C2
Pin Count 2

Compare P4SMA68AHE3_A/I with alternatives

Compare SMAJP4KE68CAE3TR with alternatives