P4SMA6.8A vs P4SMA6.8F4G feature comparison

P4SMA6.8A DB Lectro Inc

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P4SMA6.8F4G Taiwan Semiconductor

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer DB LECTRO INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
Base Number Matches 23 1
Rohs Code Yes
Package Description R-PDSO-C2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 7.48 V
Breakdown Voltage-Min 6.12 V
Breakdown Voltage-Nom 6.8 V
Clamping Voltage-Max 10.8 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 5.5 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

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