P4SMA510AHM3_A/I
vs
P4SMA510AHM3_B/I
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
VISHAY INTERTECHNOLOGY INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Date Of Intro
2017-08-23
2019-02-07
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Peak Reflow Temperature (Cel)
260
260
Terminal Finish
Matte Tin (Sn)
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
30
30
Base Number Matches
1
1
Package Description
SMA, 2 PIN
Factory Lead Time
8 Weeks
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
535 V
Breakdown Voltage-Min
485 V
Breakdown Voltage-Nom
510 V
Clamping Voltage-Max
698 V
Configuration
SINGLE
Diode Element Material
SILICON
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AC
JESD-30 Code
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
400 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
Power Dissipation-Max
3.3 W
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
434 V
Reverse Current-Max
1 µA
Reverse Test Voltage
434 V
Surface Mount
YES
Technology
AVALANCHE
Terminal Form
C BEND
Terminal Position
DUAL
Compare P4SMA510AHM3_A/I with alternatives
Compare P4SMA510AHM3_B/I with alternatives