P4SMA510AHM3_A/I vs P4SMA510AHM3_B/I feature comparison

P4SMA510AHM3_A/I Vishay Intertechnologies

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P4SMA510AHM3_B/I Vishay Intertechnologies

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2017-08-23 2019-02-07
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Peak Reflow Temperature (Cel) 260 260
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
Package Description SMA, 2 PIN
Factory Lead Time 8 Weeks
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 535 V
Breakdown Voltage-Min 485 V
Breakdown Voltage-Nom 510 V
Clamping Voltage-Max 698 V
Configuration SINGLE
Diode Element Material SILICON
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity UNIDIRECTIONAL
Power Dissipation-Max 3.3 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 434 V
Reverse Current-Max 1 µA
Reverse Test Voltage 434 V
Surface Mount YES
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL

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Compare P4SMA510AHM3_B/I with alternatives