P4SMA33CAHE3_A/I
vs
1N5644A/TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Factory Lead Time
8 Weeks
21 Weeks
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
34.7 V
31.5 V
Breakdown Voltage-Min
31.4 V
28.5 V
Breakdown Voltage-Nom
33.05 V
Clamping Voltage-Max
45.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
DO-202AA
JESD-30 Code
R-PDSO-C2
O-MALF-W2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
400 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
METAL
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
LONG FORM
Peak Reflow Temperature (Cel)
260
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3.3 W
1 W
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
28.2 V
25.6 V
Surface Mount
YES
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
TIN LEAD
Terminal Form
C BEND
WIRE
Terminal Position
DUAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
1
1
Samacsys Manufacturer
Microchip
Case Connection
CATHODE
Qualification Status
Not Qualified
Compare P4SMA33CAHE3_A/I with alternatives
Compare 1N5644A/TR with alternatives