P4SMA33CAHE3_A/H vs 1N5644A/TR feature comparison

P4SMA33CAHE3_A/H Vishay Intertechnologies

Buy Now Datasheet

1N5644A/TR Microchip Technology Inc

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 8 Weeks 21 Weeks
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 34.7 V 31.5 V
Breakdown Voltage-Min 31.4 V 28.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-202AA
JESD-30 Code R-PDSO-C2 O-MALF-W2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY METAL
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3.3 W 1 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 28.2 V 25.6 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) TIN LEAD
Terminal Form C BEND WIRE
Terminal Position DUAL AXIAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
Samacsys Manufacturer Microchip
Case Connection CATHODE
Qualification Status Not Qualified

Compare P4SMA33CAHE3_A/H with alternatives

Compare 1N5644A/TR with alternatives