P4SMA33C-AU_R1_000A1
vs
P4SMA33CHM2
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
36.3 V
36.3 V
Breakdown Voltage-Min
29.7 V
29.7 V
Breakdown Voltage-Nom
33 V
33 V
Clamping Voltage-Max
47.7 V
47.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Reference Standard
AEC-Q101; IEC-61249; ISO 10605; MIL-STD-750
AEC-Q101
Rep Pk Reverse Voltage-Max
26.8 V
26.8 V
Reverse Current-Max
1 µA
Reverse Test Voltage
26.8 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Rohs Code
Package Description
SMA, 2 PIN
Additional Feature
EXCELLENT CLAMPING CAPABILITY
JEDEC-95 Code
DO-214AC
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Compare P4SMA33C-AU_R1_000A1 with alternatives
Compare P4SMA33CHM2 with alternatives