P4SMA30CA
vs
P4SMA30CAHE3_A/I
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
EIC SEMICONDUCTOR CO LTD
VISHAY INTERTECHNOLOGY INC
Package Description
SMA, 2 PIN
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
31.5 V
31.5 V
Breakdown Voltage-Min
28.5 V
28.5 V
Breakdown Voltage-Nom
30 V
30 V
Clamping Voltage-Max
41.4 V
41.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
DO-214AC
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
3.3 W
Reference Standard
TS-16949
AEC-Q101
Rep Pk Reverse Voltage-Max
25.6 V
25.6 V
Reverse Current-Max
5 µA
Reverse Test Voltage
25.6 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
26
1
Factory Lead Time
8 Weeks
Samacsys Manufacturer
Vishay
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
30
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