P4SMA18AE3G
vs
P4SMA18AF4
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
YANGZHOU YANGJIE ELECTRONICS CO LTD
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
18.9 V
18.9 V
Breakdown Voltage-Min
17.1 V
17.1 V
Breakdown Voltage-Nom
18 V
18 V
Clamping Voltage-Max
25.5 V
25.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
DO-214AC
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
15.3 V
15.3 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Tin (Sn)
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
10
Base Number Matches
1
2
Power Dissipation-Max
1 W
Reverse Current-Max
5 µA
Reverse Test Voltage
15.3 V
Compare P4SMA18AE3G with alternatives
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