P4SMA16AT3 vs MQSMAJP4KE16AE3TR feature comparison

P4SMA16AT3 Motorola Mobility LLC

Buy Now Datasheet

MQSMAJP4KE16AE3TR Microsemi Corporation

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MOTOROLA INC MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW CAPACITANCE
Breakdown Voltage-Nom 16 V
Clamping Voltage-Max 22.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 13.6 V 13.6 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 3 1
Part Package Code DO-214AC
Pin Count 2
Breakdown Voltage-Max 16.8 V
Breakdown Voltage-Min 15.2 V
JEDEC-95 Code DO-214AC
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 1.52 W

Compare P4SMA16AT3 with alternatives

Compare MQSMAJP4KE16AE3TR with alternatives