P4SMA12A_R1_00001 vs BAS19W-T1 feature comparison

P4SMA12A_R1_00001 PanJit Semiconductor

Buy Now Datasheet

BAS19W-T1 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer PANJIT INTERNATIONAL INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description SMA, 2 PIN R-PDSO-G3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer PANJIT
Breakdown Voltage-Max 12.6 V
Breakdown Voltage-Min 11.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE RECTIFIER DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-G3
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL
Reference Standard IEC-61000-4-2
Rep Pk Reverse Voltage-Max 10.2 V 100 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish TIN
Terminal Form C BEND GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 3
Moisture Sensitivity Level 1
Number of Phases 1
Output Current-Max 0.2 A
Power Dissipation-Max 0.2 W
Qualification Status Not Qualified
Reverse Recovery Time-Max 0.05 µs

Compare P4SMA12A_R1_00001 with alternatives

Compare BAS19W-T1 with alternatives