P4SMA12AHM3_A/I vs SMAJ12ATR feature comparison

P4SMA12AHM3_A/I Vishay Intertechnologies

Buy Now Datasheet

SMAJ12ATR Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description SMA, 2 PIN SMA, 2 PIN
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 8 Weeks
Date Of Intro 2019-02-07 2018-08-30
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 12.6 V 14.7 V
Breakdown Voltage-Min 11.4 V 13.3 V
Breakdown Voltage-Nom 12 V 14 V
Clamping Voltage-Max 16.7 V 19.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3.3 W 3.3 W
Reference Standard AEC-Q101, UL RECOGNIZED MIL-STD-750
Rep Pk Reverse Voltage-Max 10.2 V 12 V
Reverse Current-Max 1 µA 5 µA
Reverse Test Voltage 10.2 V 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 1

Compare P4SMA12AHM3_A/I with alternatives

Compare SMAJ12ATR with alternatives