P4SMA12A vs BAS19W-R1-00001 feature comparison

P4SMA12A Bourns Inc

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BAS19W-R1-00001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer BOURNS INC PAN JIT INTERNATIONAL INC
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.70
Factory Lead Time 16 Weeks
Samacsys Manufacturer Bourns
Breakdown Voltage-Max 12.6 V
Breakdown Voltage-Min 11.4 V
Breakdown Voltage-Nom 12 V
Clamping Voltage-Max 16.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE RECTIFIER DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Reference Standard IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 10.2 V 120 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 26 1
Application FAST RECOVERY
Forward Voltage-Max (VF) 1 V
Non-rep Pk Forward Current-Max 4 A
Number of Phases 1
Output Current-Max 0.2 A
Power Dissipation-Max 0.2 W
Reverse Current-Max 0.1 µA
Reverse Recovery Time-Max 0.05 µs

Compare P4SMA12A with alternatives

Compare BAS19W-R1-00001 with alternatives