P4KE9.1C-T3 vs P4KE9.1CE3TR feature comparison

P4KE9.1C-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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P4KE9.1CE3TR Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 10 V 10 V
Breakdown Voltage-Min 8.19 V 8.19 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1.13 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 7.37 V 7.37 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 22
Part Package Code DO-41
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 9.1 V
Clamping Voltage-Max 13.8 V
JESD-609 Code e3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Terminal Finish MATTE TIN

Compare P4KE9.1C-T3 with alternatives

Compare P4KE9.1CE3TR with alternatives