P4KE9.1A vs P4KE9.1A feature comparison

P4KE9.1A Formosa Microsemi Co Ltd

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P4KE9.1A International Semiconductor Inc

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer FORMOSA MICROSEMI CO LTD INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY LOW IMPEDANCE
Breakdown Voltage-Max 9.55 V 9.55 V
Breakdown Voltage-Min 8.65 V 8.65 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Rep Pk Reverse Voltage-Max 7.78 V 7.8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 4 2
Breakdown Voltage-Nom 9.1 V
Clamping Voltage-Max 13.4 V
Qualification Status Not Qualified
Reverse Current-Max 50 µA

Compare P4KE9.1A with alternatives

Compare P4KE9.1A with alternatives