P4KE82
vs
P4KE82AR1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Package Description
PLASTIC PACKAGE-2
O-PALF-W2
Reach Compliance Code
compliant
compliant
Breakdown Voltage-Max
90.2 V
86.1 V
Breakdown Voltage-Min
73.8 V
77.9 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-41
DO-204AL
JESD-30 Code
O-PALF-W2
O-PALF-W2
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
66.4 V
70.1 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
36
4
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom
82 V
Clamping Voltage-Max
113 V
JESD-609 Code
e3
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Terminal Finish
MATTE TIN
Compare P4KE82 with alternatives
Compare P4KE82AR1 with alternatives