P4KE82 vs P4KE82 feature comparison

P4KE82 Lite-On Semiconductor Corporation

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P4KE82 Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer LITE-ON SEMICONDUCTOR CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code DO-41
Package Description PLASTIC PACKAGE-2 PLASTIC PACKAGE-2
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 90.2 V 90.2 V
Breakdown Voltage-Min 73.8 V 73.8 V
Breakdown Voltage-Nom 82 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 118 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 255
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 66.4 V 66.4 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 8 36
Moisture Sensitivity Level 1
Reference Standard UL RECOGNIZED

Compare P4KE82 with alternatives

Compare P4KE82 with alternatives