P4KE75CA-GT3 vs P4KE75C-B feature comparison

P4KE75CA-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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P4KE75C-B Rectron Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD RECTRON LTD
Package Description O-PALF-W2
Reach Compliance Code unknown not_compliant
Breakdown Voltage-Max 78.8 V 82.5 V
Breakdown Voltage-Min 71.3 V 67.5 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED UL CERTIFIED
Rep Pk Reverse Voltage-Max 64.1 V 60.7 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 3
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY; PRSM-MIN
Breakdown Voltage-Nom 75 V
Clamping Voltage-Max 108 V
JESD-609 Code e3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 5 µA
Reverse Test Voltage 60.7 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

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