P4KE75AHA0G vs 1.4KESD6.0CE3TR feature comparison

P4KE75AHA0G Taiwan Semiconductor

Buy Now Datasheet

1.4KESD6.0CE3TR Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROSEMI CORP
Package Description DO-41, 2 PIN O-LALF-W2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY LOW CAPACITANCE
Breakdown Voltage-Max 78.8 V
Breakdown Voltage-Min 71.3 V 6.67 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL DO-204AH
JESD-30 Code O-PALF-W2 O-LALF-W2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 400 W 1400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 0.5 W
Reference Standard AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 64.1 V 6 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 8
Part Package Code DO-35
Pin Count 2
Qualification Status Not Qualified

Compare P4KE75AHA0G with alternatives

Compare 1.4KESD6.0CE3TR with alternatives