P4KE68HE3/54 vs BZW04-58A0G feature comparison

P4KE68HE3/54 Vishay Semiconductors

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BZW04-58A0G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY SEMICONDUCTORS TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-41
Package Description O-PALF-W2 O-PALF-W2
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max 74.8 V 71.4 V
Breakdown Voltage-Min 61.2 V 64.6 V
Breakdown Voltage-Nom 68 V 68 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 98 V 92 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.5 W 1 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 55.1 V 58.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1

Compare P4KE68HE3/54 with alternatives

Compare BZW04-58A0G with alternatives