P4KE62A
vs
P4KE62A
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
BYTESONIC ELECTRONICS CO LTD
|
GALAXY SEMI-CONDUCTOR CO LTD
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
65.1 V
|
|
| Breakdown Voltage-Min |
58.9 V
|
|
| Breakdown Voltage-Nom |
62 V
|
62 V
|
| Case Connection |
ISOLATED
|
|
| Clamping Voltage-Max |
85 V
|
85 V
|
| Configuration |
SINGLE
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| Non-rep Peak Rev Power Dis-Max |
400 W
|
|
| Number of Elements |
1
|
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
|
| Rep Pk Reverse Voltage-Max |
53 V
|
53 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Base Number Matches |
1
|
1
|
| Diode Element Material |
|
SILICON
|
| Peak Reflow Temperature (Cel) |
|
260
|
|
|
|