P4KE62-B vs P4KE62-G feature comparison

P4KE62-B Rectron Semiconductor

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P4KE62-G Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer RECTRON LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 4 3
Package Description O-PALF-W2
Breakdown Voltage-Max 68.2 V
Breakdown Voltage-Min 55.8 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 50.2 V
Surface Mount NO
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL

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