P4KE6.8TR
vs
P4KE6.8-GT3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MDE SEMICONDUCTOR INC
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Base Number Matches
3
2
Rohs Code
Yes
Package Description
O-PALF-W2
Breakdown Voltage-Max
7.48 V
Breakdown Voltage-Min
6.12 V
Case Connection
ISOLATED
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-41
JESD-30 Code
O-PALF-W2
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
400 W
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Package Shape
ROUND
Package Style
LONG FORM
Polarity
UNIDIRECTIONAL
Power Dissipation-Max
1 W
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
5.5 V
Surface Mount
NO
Technology
AVALANCHE
Terminal Form
WIRE
Terminal Position
AXIAL
Compare P4KE6.8-GT3 with alternatives