P4KE6.8CATR vs P4KE6.8C-GT3 feature comparison

P4KE6.8CATR MDE Semiconductor Inc

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P4KE6.8C-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer MDE SEMICONDUCTOR INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Base Number Matches 3 2
Rohs Code Yes
Package Description O-PALF-W2
Breakdown Voltage-Max 7.48 V
Breakdown Voltage-Min 6.12 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Polarity BIDIRECTIONAL
Power Dissipation-Max 1 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 5.5 V
Surface Mount NO
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL

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