P4KE6.8C-T3 vs P4KE6.8CATR feature comparison

P4KE6.8C-T3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

P4KE6.8CATR MDE Semiconductor Inc

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MDE SEMICONDUCTOR INC
Package Description O-PALF-W2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 7.48 V
Breakdown Voltage-Min 6.12 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Polarity BIDIRECTIONAL
Power Dissipation-Max 1 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 5.5 V
Surface Mount NO
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 3 3
ECCN Code EAR99
HTS Code 8541.10.00.50

Compare P4KE6.8C-T3 with alternatives