P4KE550A vs P4KE550A feature comparison

P4KE550A MDE Semiconductor Inc

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P4KE550A Galaxy Semi-Conductor Co Ltd

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MDE SEMICONDUCTOR INC GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max 577.5 V
Breakdown Voltage-Min 522.5 V
Breakdown Voltage-Nom 550 V
Case Connection ISOLATED
Clamping Voltage-Max 760 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard MIL-STD-750, UL LISTED
Rep Pk Reverse Voltage-Max 467 V
Reverse Current-Max 5 µA
Reverse Test Voltage 467 V
Surface Mount NO
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 3 1