P4KE51A
vs
P4KE51AHB0G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAITRON COMPONENTS INC
TAIWAN SEMICONDUCTOR CO LTD
Package Description
DO-41, 2 PIN
DO-41, 2 PIN
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
53.6 V
53.6 V
Breakdown Voltage-Min
48.5 V
48.5 V
Breakdown Voltage-Nom
51.05 V
51 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
70.1 V
70.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-204AL
DO-204AL
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.5 W
1 W
Reference Standard
MIL-STD-750; UL RECOGNIZED
AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
43.6 V
43.6 V
Reverse Current-Max
1 µA
Reverse Test Voltage
43.6 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
57
1
JESD-609 Code
e3
Terminal Finish
MATTE TIN
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