P4KE51 vs P4KE51AHR1G feature comparison

P4KE51 TDK Micronas GmbH

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P4KE51AHR1G Taiwan Semiconductor

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer ITT SEMICONDUCTOR TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 56.1 V 53.6 V
Breakdown Voltage-Min 45.9 V 48.5 V
Breakdown Voltage-Nom 51 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 73.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 54 1
Rohs Code Yes
Package Description DO-41, 2 PIN
Additional Feature EXCELLENT CLAMPING CAPABILITY
JEDEC-95 Code DO-204AL
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 400 W
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max 1 W
Reference Standard AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 43.6 V
Terminal Finish MATTE TIN

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Compare P4KE51AHR1G with alternatives