P4KE47A vs BZW04-37BHR0G feature comparison

P4KE47A Galaxy Semi-Conductor Co Ltd

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BZW04-37BHR0G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 47.05 V 43.05 V
Clamping Voltage-Max 64.8 V 59.3 V
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 40.2 V 36.8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Base Number Matches 57 1
Package Description DO-41, 2 PIN
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max 45.2 V
Breakdown Voltage-Min 40.9 V
Case Connection ISOLATED
Configuration SINGLE
JEDEC-95 Code DO-204AL
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 1 W
Reference Standard AEC-Q101
Terminal Finish TIN
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 10

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