P4KE39C vs MVP4KE39CE3TR feature comparison

P4KE39C Taiwan Semiconductor

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MVP4KE39CE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROSEMI CORP
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 42.9 V 42.9 V
Breakdown Voltage-Min 35.1 V 35.1 V
Breakdown Voltage-Nom 39 V 39 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 56.4 V 56.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1.13 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 31.6 V 31.6 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 32 1
Part Package Code DO-41
Package Description ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
Pin Count 2

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Compare MVP4KE39CE3TR with alternatives