P4KE33CE3
vs
BZW04-28BA0G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Part Package Code |
DO-41
|
|
| Package Description |
O-PALF-W2
|
O-PALF-W2
|
| Pin Count |
2
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
36.3 V
|
34.7 V
|
| Breakdown Voltage-Min |
29.7 V
|
31.4 V
|
| Breakdown Voltage-Nom |
33 V
|
33.05 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
47.7 V
|
45.7 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-204AL
|
DO-204AL
|
| JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Peak Rev Power Dis-Max |
400 W
|
400 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
1.13 W
|
1 W
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
26.8 V
|
28.2 V
|
| Reverse Current-Max |
2 µA
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
MATTE TIN
|
MATTE TIN
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
1
|
| Additional Feature |
|
EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
|
|
|
|
Compare P4KE33CE3 with alternatives
Compare BZW04-28BA0G with alternatives