P4KE33C vs P4KE33CA-B feature comparison

P4KE33C International Semiconductor Inc

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P4KE33CA-B Rectron Semiconductor

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC RECTRON LTD
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW IMPEDANCE EXCELLENT CLAMPING CAPABILITY; PRSM-MIN
Breakdown Voltage-Max 36.3 V 34.7 V
Breakdown Voltage-Min 29.7 V 31.4 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 47.7 V 45.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified
Reverse Current-Max 5 µA 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 51 3
Rohs Code Yes
Breakdown Voltage-Nom 33 V
JEDEC-95 Code DO-41
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Reference Standard UL CERTIFIED
Rep Pk Reverse Voltage-Max 28.2 V
Reverse Test Voltage 28.2 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

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