P4KE30AA1G vs P4KE30AR0G feature comparison

P4KE30AA1G Taiwan Semiconductor

Buy Now Datasheet

P4KE30AR0G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 31.5 V 31.5 V
Breakdown Voltage-Min 28.5 V 28.5 V
Breakdown Voltage-Nom 30 V 30 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 41.4 V 41.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Rep Pk Reverse Voltage-Max 25.6 V 25.6 V
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Package Description DO-41, 2 PIN
Additional Feature EXCELLENT CLAMPING CAPABILITY
Reference Standard UL RECOGNIZED
Surface Mount NO

Compare P4KE30AA1G with alternatives

Compare P4KE30AR0G with alternatives