P4KE27HA0 vs P4KE27 feature comparison

P4KE27HA0 Taiwan Semiconductor

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P4KE27 TDK Micronas GmbH

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD ITT SEMICONDUCTOR
Package Description O-PALF-W2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 29.7 V 29.7 V
Breakdown Voltage-Min 24.3 V 24.3 V
Breakdown Voltage-Nom 27 V 27 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 39.1 V 39.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 21.8 V 21.8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 2
Qualification Status Not Qualified
Reverse Current-Max 5 µA

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