P4KE20A-H vs P4KE20A_R2_00001 feature comparison

P4KE20A-H Formosa Microsemi Co Ltd

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P4KE20A_R2_00001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer FORMOSA MICROSEMI CO LTD PANJIT INTERNATIONAL INC
Package Description O-PALF-W2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Max 21 V 21 V
Breakdown Voltage-Min 19 V 19 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W
Rep Pk Reverse Voltage-Max 17.1 V 17.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Pbfree Code Yes
Breakdown Voltage-Nom 20 V
Clamping Voltage-Max 27.7 V

Compare P4KE20A-H with alternatives

Compare P4KE20A_R2_00001 with alternatives