P4KE20A-GT3 vs JANTXV1N5642A feature comparison

P4KE20A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

JANTXV1N5642A Microchip Technology Inc

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROCHIP TECHNOLOGY INC
Package Description O-PALF-W2 HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 21 V 25.2 V
Breakdown Voltage-Min 19 V 22.8 V
Case Connection ISOLATED CATHODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-202AA
JESD-30 Code O-PALF-W2 O-MALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Qualified
Reference Standard UL RECOGNIZED MIL-19500
Rep Pk Reverse Voltage-Max 17.1 V 20.5 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 7
Breakdown Voltage-Nom 24 V
Clamping Voltage-Max 33.2 V
JESD-609 Code e0
Terminal Finish TIN LEAD

Compare P4KE20A-GT3 with alternatives

Compare JANTXV1N5642A with alternatives