P4KE200C-GT3 vs JANTXV1N6137A feature comparison

P4KE200C-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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JANTXV1N6137A Micross Components

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSS COMPONENTS
Package Description O-PALF-W2 HERMETIC SEALED PACKAGE-2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 220 V
Breakdown Voltage-Min 180 V 180 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2 O-MALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1.5 W
Qualification Status Not Qualified Qualified
Reference Standard UL RECOGNIZED MIL-19500/516
Rep Pk Reverse Voltage-Max 162 V 152 V
Surface Mount NO NO
Technology AVALANCHE ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 8
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Nom 200 V
Clamping Voltage-Max 273 V

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