P4KE160C-GT3 vs P4KE160C-G feature comparison

P4KE160C-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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P4KE160C-G Comchip Technology Corporation Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD COMCHIP TECHNOLOGY CO LTD
Package Description O-PALF-W2
Reach Compliance Code unknown not_compliant
Breakdown Voltage-Max 176 V
Breakdown Voltage-Min 144 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 130 V 130 V
Surface Mount NO NO
Technology AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 3
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 160 V
Clamping Voltage-Max 29.1 V
JESD-609 Code e3
Terminal Finish Tin (Sn)

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