P4KE15A_R2_00001
vs
P4KE15AR1G
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PANJIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
15.8 V
15.8 V
Breakdown Voltage-Min
14.3 V
14.3 V
Breakdown Voltage-Nom
15.05 V
15 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
21.2 V
21.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-41
DO-204AL
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
12.8 V
12.8 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
1
Package Description
O-PALF-W2
JESD-609 Code
e3
Power Dissipation-Max
1 W
Reference Standard
UL RECOGNIZED
Terminal Finish
MATTE TIN
Compare P4KE15A_R2_00001 with alternatives
Compare P4KE15AR1G with alternatives