P4KE150A-T3 vs P4KE150A feature comparison

P4KE150A-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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P4KE150A International Semiconductor Inc

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD INTERNATIONAL SEMICONDUCTOR INC
Package Description O-PALF-W2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 158 V 158 V
Breakdown Voltage-Min 143 V 143 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 128 V 128 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 58
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature LOW IMPEDANCE
Breakdown Voltage-Nom 150 V
Clamping Voltage-Max 207 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Reverse Current-Max 5 µA

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Compare P4KE150A with alternatives