P4KE13CTRE3 vs P4KE13CE3TR feature comparison

P4KE13CTRE3 Microsemi Corporation

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P4KE13CE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 13 V 13 V
Clamping Voltage-Max 19 V 19 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 10.5 V 10.5 V
Surface Mount NO NO
Base Number Matches 2 11
Part Package Code DO-41
Package Description O-PALF-W2
Pin Count 2
Breakdown Voltage-Max 14.3 V
Breakdown Voltage-Min 11.7 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-204AL
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 1.13 W
Qualification Status Not Qualified
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position AXIAL

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Compare P4KE13CE3TR with alternatives